mbr10hxx, mbrf10hxx & mbrb10hxx series 1 0.08 (2.032) 0.24 (6.096) 0.42 (10.66) 0.63 (17.02) 0.12 (3.05) 0.33 (8.38) mounting pad layout to-263ab 0.380 (9.65) 0.411 (10.45) 0.320 (8.13) 0.360 (9.14) 0.591 (15.00) 0.624 (15.85) 1 2 0.245 (6.22) min k 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) k 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.140 (3.56) 0.090 (2.29) 0.110 (2.79) 0.047 (1.19) 0.055 (1.40) pin 1 pin 2 k - heatsink 0-0.01 (0-0.254) 0.060 (1.52) 0.405 (10.27) 0.383 (9.72) 0.191 (4.85) 0.171 (4.35) 0.600 (15.5) 0.580 (14.5) 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.027 (0.69) 0.140 (3.56) 0.130 (3.30) 0.350 (8.89) 0.330 (8.38) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) 0.122 (3.08) 0.110 (2.80) 0.100 (2.54) 0.022 (0.55) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 12 pin dia. dia. pin 1 pin 2 0.676 (17.2) 0.646 (16.4) ito-220ac (mbrf10hxx) to-220ac (mbr10hxx) dimensions in inches and (millimeters) to-263ab (mbrb10hxx) 0.154 (3.91) 0.148 (3.74) dia. 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 12 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.410 (10.41) 0.390 (9.91) 0.635 (16.13) 0.625 (15.87) 0.603 (15.32) 0.573 (14.55) pin 0.415 (10.54) max. pin 1 pin 2 case 0.370 (9.40) 0.360 (9.14) mechanical data case: jedec to-220ac, ito-220ac & to-263ab molded plastic body terminals: plated leads, solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 10 in-lbs maximum weight: 0.08 oz., 2.24 g features ?plastic package has underwriters laboratory flammability classification 94 v-0 ?metal silicon junction, majority carrier conduction ?low forward voltage drop, low power loss and high efficiency ?guardring for overvoltage protection ?for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ?high temperature soldering guaranteed: 250 ?/10 seconds, 0.25" (6.35 mm) from case ?rated for reverse surge and esd ?175 ? maximum operation junction temperature www.kersemi.com
mbr10hxx, mbrf10hxx & mbrb10hxx series 2 maximum ratings (t c = 25 ? unless otherwise noted) parameter symbol mbr10h35 MBR10H45 mbr10h50 mbr10h60 unit maximum repetitive peak reverse voltage v rrm 35 45 50 60 v working peak reverse voltage v rwm 35 45 50 60 v maximum dc blocking voltage v dc 35 45 50 60 v maximum average forward rectified current (see fig.1) i f(av) 10 a peak repetitive forward current at t c = 150 ? (20 khz sq. wave) i frm 20 a non-repetitive avalanche energy at 25 c, i as = 4 a, l = 10 mh e as 80 mj peak forward surge current 8.3 ms single half sine-wave i fsm 150 a superimposed on rated load (jedec method) peak repetitive reverse current at t p = 2.0 s, 1 kh z i rrm 1.0 0.5 a peak non-repetitive reverse energy (8/20 s waveform) e rsm 20 10 mj electrostatic discharge capacitor voltage v c 25 kv human body model: c = 100 pf, r = 1.5 k ? voltage rate of change (rated v r ) dv/dt 10,000 v/ s operating junction temperature range t j 65 to +175 ? storage temperature range t stg 65 to +175 ? rms isolation voltage (mbrf type only) from terminals 4500 (1) to heatsink with t = 1.0 second, rh 30% v isol 3500 (2) v 1500 (3) electrical characteristics (t c = 25? unless otherwise noted) parameter symbol mbr10h35, MBR10H45 mbr10h50, mbr10h60 unit ty p m a x ty p m a x maximum instantaneous at i f = 10 a t j = 25 ? 0.63 0.71 forward voltage (4) at i f = 10 a t j = 125 ? v f 0.49 0.55 0.57 0.61 v at i f = 20 a t j = 25 ? 0.75 0.85 at i f = 20 a t j =125 ? 0.62 0.68 0.68 0.71 maximum instantaneous reverse current t j = 25 ? 100 100 a at rated dc blocking voltage (4) t j =125 ? i r 4.0 12 2.0 12 ma thermal characteristics (t c = 25 ? unless otherwise noted) parameter symbol mbr mbrf mbrb unit maximum thermal resistance r jc 2.0 4.0 2.0 ?/w notes: (1) clip mounting (on case), where lead does not overlap heatsink with 0.110?offset (3) screw mounting with 4-40 screw, where w asher diameter is 4.9 mm (0.19? (2) clip mounting (on case), where leads do overlap heatsink (4) pulse test: 300 s pulse width, 1% duty cycle ordering information product case package code package option mbr10h35 ?mbr10h60 to-220ac 45 anti-static tube, 50/tube, 2k/carton mbrf10h35 ?mbrf10h60 ito-220ac 45 anti-static tube, 50/tube, 2k/carton 31 13 reel, 800/reel, 4.8k/carton mbrb10h35 ?mbrb10h60 to-263ab 45 anti-static tube, 50/tube, 2k/carton 81 anti-static 13 reel, 800/reel, 4.8k/carton www.kersemi.com
mbr10hxx, mbrf10hxx & mbrb10hxx series 3 1 10 100 25 50 75 100 125 150 175 fig. 3 ?typical instantaneous forward characteristics fig. 5 ?typical junction capacitance fig. 6 ?typical transient thermal impedance number of cycles at 60 h z reverse voltage (v) peak forward surge current (a) 0 5 10 15 025 50 75 100 125 150 175 fig. 1 ?forward current derating curve average forward current (a) case temperature ( c) fig. 2 ?maximum non-repetitive peak forward surge current 0.01 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.0 10 100 instantaneous forward voltage (v) instantaneous forward current (a) 020 60 40 100 80 0.0001 0.001 0.1 0.01 1 10 100 fig. 4 ?typical reverse characteristics instantaneous reverse leakage current (ma) percent of rated peak reverse voltage (%) t, pulse duration (sec.) transeint thermal impedance ( c/w) pf - junction capacitance 0.01 10 1 0.1 0.1 1 10 110 0 100 1000 10000 100 t j = t j max. 8.3ms single half sine-wave (jedec method) mbr10h35 -- MBR10H45 mbr10h50 -- mbr10h60 mbr10h35 -- MBR10H45 mbr10h50 -- mbr10h60 t j = 25 c f = 1.0 mh z vsig = 50mvp-p t j = 150 c t j = 150 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c mbr10h35 -- MBR10H45 mbr10h50 -- mbr10h60 mbrf mbr, mbrb www.kersemi.com
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